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Patent Searching and Data


Title:
METHOD AND DEVICE FOR REMOVING CONDUCTIVE METAL OXIDE THIN FILM
Document Type and Number:
WIPO Patent Application WO/2007/015454
Kind Code:
A1
Abstract:
[PROBNLEMS] A method and a device for removing a conductive metal oxide thin film without leaving a scar nor stress deformation. [MEANS OF SOLVING PROBLEMS] The device comprises a first electrode (18) disposed so as to immerse one end thereof into electrolyte (17), a second electrode (13) disposed so as to immerse one end thereof into electrolyte (17) to allow the one end to face a conductive metal oxide thin film (11) so that the conductive metal oxide thin film (11) of a base material (12) immersed in the electrolyte (17) in a treating bath (16) acts as a cathodes, and a power supply (14) for applying a dc voltage so that the second electrode (13) acts as an anode and the first electrode (18) as a cathode. A dc voltage is applied to the both electrodes (13, 18) to remove the conductive metal oxide thin film (11) by a reduction reaction. [EFFECTS] A conductive metal oxide thin film can be efficiently removed without causing a scan nor stress deformation, and hence an expensive functional glass substrate or the like can be recycled.

Inventors:
DAIKU HIROYUKI (JP)
INOUE TETSUYA (JP)
Application Number:
PCT/JP2006/315135
Publication Date:
February 08, 2007
Filing Date:
July 31, 2006
Export Citation:
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Assignee:
HITACHI SHIPBUILDING ENG CO (JP)
HITZ HI TECHNOLOGY CORP (JP)
DAIKU HIROYUKI (JP)
INOUE TETSUYA (JP)
International Classes:
C03C23/00; C25F3/00; C25F7/00
Foreign References:
JPH06321581A1994-11-22
JPH0986968A1997-03-31
JP2004531641A2004-10-14
Attorney, Agent or Firm:
MIZOGAMI, Mitsuyoshi et al. (1-10-4 Utsubo-Hommachi, Nishi-k, Osaka-shi Osaka 04, JP)
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