Title:
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR, METHOD FOR FABRICATING NITRIDE-BASED SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2010/041485
Kind Code:
A1
Abstract:
Provided is a method for fabricating a p-type gallium nitride-based semiconductor capable of providing a gallium nitride-based semiconductor containing a p-type dopant without activation annealing. A GaN-based semiconductor region (17) containing the p-type dopant is formed above a support (13) in a growth furnace (10). The GaN-based semiconductor layer (17) is grown on a GaN-based semiconductor layer (15) by supplying an organometallic material and ammonia to the growth furnace (10). The GaN-based semiconductor is doped with the p-type dopant, and magnesium is an example of the p-type dopant. After the GaN-based semiconductor regions (15, 17) are formed, an atmosphere (19) containing at least either monomethylamine or monoethylamine is formed in the growth furnace (10). After the atmosphere (19) is provided, the substrate temperature is decreased from the growth temperature of the GaN-based semiconductor region (17). When film formation is completed and the substrate temperature is decreased to close to a room temperature, the fabrication of a p-type GaN-based semiconductor (17a) and an epitaxial wafer (E) is completed.
Inventors:
UENO MASAKI (JP)
YOSHIZUMI YUSUKE (JP)
NAKAMURA TAKAO (JP)
YOSHIZUMI YUSUKE (JP)
NAKAMURA TAKAO (JP)
Application Number:
PCT/JP2009/059441
Publication Date:
April 15, 2010
Filing Date:
May 22, 2009
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
UENO MASAKI (JP)
YOSHIZUMI YUSUKE (JP)
NAKAMURA TAKAO (JP)
UENO MASAKI (JP)
YOSHIZUMI YUSUKE (JP)
NAKAMURA TAKAO (JP)
International Classes:
H01L21/205; C23C16/34; C30B29/38; H01L33/00
Foreign References:
| JPH08115880A | 1996-05-07 | |||
| JPH09199758A | 1997-07-31 | |||
| JPH104211A | 1998-01-06 | |||
| JP2001119065A | 2001-04-27 | |||
| JP2001156003A | 2001-06-08 | |||
| JP2003178987A | 2003-06-27 | |||
| JPH05183189A | 1993-07-23 | |||
| JPH09199758A | 1997-07-31 | |||
| JP2003178987A | 2003-06-27 | |||
| JPH08115880A | 1996-05-07 |
Other References:
EITING C J ET AL.: "Growth of low resistivity p-type GaN by metal organic chemical vapour deposition.", ELECTRON LETT, vol. 33, no. 23, 6 November 1997 (1997-11-06), UNIV. TEXAS AT AUSTIN, TX, USA, pages 1987 - 1989, XP006008148
See also references of EP 2333819A4
See also references of EP 2333819A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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