METHOD FOR FORMING DUAL-DECK CHANNEL HOLE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

WIPO Patent Application WO/2019/232784

A1

A method for forming a channel hole structure of a 3D memory device is disclosed. The method includes: forming a first alternating dielectric stack and a first insulating layer on a substrate; forming a first channel structure in a first channel hole penetrating the first insulating layer and the first alternating dielectric stack; forming a sacrificial inter-deck plug in the first insulating layer; forming a second alternating dielectric stack on the sacrificial inter-deck plug; forming a second channel hole penetrating the second alternating dielectric stack and expose a portion of the sacrificial inter-deck plug; removing the sacrificial inter-deck plug to form a cavity; and forming an inter-deck channel plug in the cavity and a second channel structure in the second channel hole, the inter-deck channel plug contacts the first channel structure and the second channel structure.

JP2003068895	METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE
JP2013161878	SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
JP5679622	Insulating film and semiconductor devices using it

TAO QIAN (CN)
HU YUSHI (CN)
LU ZHENYU (CN)
XIAO LIHONG (CN)
CHEN JUN (CN)
DAI XIAOWANG (CN)
LYU JIN (CN)
ZHU JIFENG (CN)
DONG JINWEN (CN)
YAO LAN (CN)

PCT/CN2018/090426

December 12, 2019

June 08, 2018

Click for automatic bibliography generation  

YANGTZE MEMORY TECH CO LTD (CN)

H01L29/788

US20120299082A1	2012-11-29
US20120280298A1	2012-11-08
US20160005760A1	2016-01-07
US20120299005A1	2012-11-29
US20150008506A1	2015-01-08

NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)

View/Download PDF      PDF Help

Previous Patent: CANNABIDIOL COMPOSITION AND USE THEREOF

Next Patent: DEVICE MANAGEMENT METHOD, DEVICE MANAGEMENT APPARATUS, AND MOBILE TERMINAL