Title:
METHOD FOR FORMING NITRIDE AND OXIDE FILMS, AND APPARATUS FOR SAME
Document Type and Number:
WIPO Patent Application WO/2018/181642
Kind Code:
A1
Abstract:
[Problem] To provide a method for forming a nitride or oxide film on a surface of a group III-nitride semiconductor such as GaN or the like while reducing defects on the surface of the group III-nitride semiconductor; and an apparatus for same. [Solution] A nitride or oxide film is formed by evaporating a target material through a PLD method and reacting the target material with nitrogen radicals or oxygen radicals, wherein defects due to nitrogen vacancies are suppressed by heating a group III-nitride semiconductor while irradiating nitrogen radicals onto the group III-nitride semiconductor. Also, uniformity in the film thickness of the film to be formed can be improved by splitting a laser beam into a plurality of beams.
Inventors:
UEDA DAISUKE (JP)
FERREYRA ROMUALDO ALEJANDRO (JP)
FERREYRA ROMUALDO ALEJANDRO (JP)
Application Number:
PCT/JP2018/013082
Publication Date:
October 04, 2018
Filing Date:
March 29, 2018
Export Citation:
Assignee:
NAT UNIV CORP KYOTO INST TECHNOLOGY (JP)
International Classes:
H01L21/203; C23C14/06; C23C14/08; C23C14/28
Domestic Patent References:
| WO2011039853A1 | 2011-04-07 |
Foreign References:
| JP2006059956A | 2006-03-02 | |||
| JP2006237556A | 2006-09-07 | |||
| JP2016062956A | 2016-04-25 | |||
| JP2002241930A | 2002-08-28 | |||
| JP2014173117A | 2014-09-22 |
Attorney, Agent or Firm:
MORIWAKI IP, P.C. (JP)
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