Title:
METHOD FOR FORMING SILICON DIOXIDE FILM ON SILICON SUBSTRATE, METHOD FOR FORMING OXIDE FILM ON SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO2003100844
Kind Code:
B1
Abstract:
A silicon substrate (1) is immersed for 30 minutes in azeotropic nitric acid heated at the azeotropic point of 120.7°C to form a very thin chemical oxide film (5) on the surface of the silicon substrate (1). A metal film (6) (aluminum-silicon alloy film) is deposited on the chemical oxide film (5). The substrate is heated in a gas containing hydrogen at 200°C for 20 minutes. By thus heating the substrate in a gas containing hydrogen, the hydrogen reacts with the interface states and defect states in the chemical oxide film (5), and the states disappear. Consequently, the quality of film can be improved. Thus, a very thin silicon dioxide film having a low leak current density and a high quality can be formed on a silicon substrate at low temperatures with a good film thickness controllability.
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Inventors:
KOBAYASHI HIKARU (JP)
Application Number:
PCT/JP2003/006348
Publication Date:
May 13, 2004
Filing Date:
May 21, 2003
Export Citation:
Assignee:
JAPAN SCIENCE & TECH CORP (JP)
KOBAYASHI HIKARU (JP)
KOBAYASHI HIKARU (JP)
International Classes:
H01L27/04; H01L21/28; H01L21/316; H01L21/336; H01L21/822; H01L29/51; H01L29/78; H01L29/786; (IPC1-7): H01L21/316
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