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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING BACK-THINNED SOLID-STATE IMAGING DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/149686
Kind Code:
A1
Abstract:
A method for manufacturing a back-thinned solid-state imaging device comprises: a first step for preparing a semiconductor layer of a first conductivity type having a front surface and a back surface; a second step for forming a first irregular region on the front surface of the semiconductor layer by selectively etching the front surface of the semiconductor layer; a third step for forming a second irregular region on the front surface of the semiconductor layer by smoothing the irregularities of the first irregular region; and a fourth step for forming an insulating layer along the second irregular region and forming a plurality of charge transfer electrodes on the insulating layer.

Inventors:
YAMAMOTO KOEI (JP)
KASUYA TATSUKI (JP)
TANIZAKI KAZUHIRO (JP)
SUZUKI YOSHIYUKI (JP)
Application Number:
PCT/JP2021/001711
Publication Date:
July 29, 2021
Filing Date:
January 19, 2021
Export Citation:
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Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L27/148; H04N5/369; H04N5/372
Domestic Patent References:
WO2010110317A12010-09-30
WO2017122545A12017-07-20
Foreign References:
JPH0621016A1994-01-28
JP2012199417A2012-10-18
JP2006229112A2006-08-31
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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