Title:
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/008297
Kind Code:
A1
Abstract:
[Problem] To provide a method for manufacturing a group III nitride semiconductor device that can perform film formation of a group III nitride semiconductor having excellent crystallinity. [Solution] This method for manufacturing a group III nitride semiconductor device comprises: a step for preparing a substrate by forming a ground GaN layer on an Si (111) substrate; a step for growing a first GaN layer having a higher electrical resistivity than the ground GaN layer on the ground GaN layer; and a step for growing a second GaN layer on the first GaN layer. In the step for growing the first GaN layer, a mixed gas of N2 and H2 is plasmatized and supplied to the substrate, and an organic metal gas is supplied to the substrate without being plasmatized. In the step for growing the second GaN layer, N2 is plasmatized and supplied to the substrate, and an organic metal gas is supplied to the substrate without being plasmatized, and the second GaN layer undergoes pulse growth.
Inventors:
HORI MASARU (JP)
ODA OSAMU (JP)
AMALRAJ FRANK WILSON (JP)
ODA OSAMU (JP)
AMALRAJ FRANK WILSON (JP)
Application Number:
PCT/JP2022/028303
Publication Date:
February 02, 2023
Filing Date:
July 21, 2022
Export Citation:
Assignee:
NATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (JP)
International Classes:
H01L21/205; C23C16/34
Foreign References:
| JP2019212714A | 2019-12-12 | |||
| JP2020068273A | 2020-04-30 | |||
| JP2017139263A | 2017-08-10 | |||
| JP2001168040A | 2001-06-22 | |||
| JP2015525484A | 2015-09-03 | |||
| JP2012517711A | 2012-08-02 |
Attorney, Agent or Firm:
AICHI, TAKAHASHI, IWAKURA & ASSOCIATES (JP)
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