METHOD FOR MANUFACTURING SAPPHIRE SINGLE CRYSTAL, APPARATUS FOR PULLING SAPPHIRE SINGLE CRYSTAL, AND SAPPHIRE SINGLE CRYSTAL

WIPO Patent Application WO/2011/108417

A1

Disclosed is a method for manufacturing a sapphire single crystal, which has: a first step wherein a crucible (20) is heated using a heating coil (heating means) (30), and aluminum oxide in the crucible (20) is melted to obtain an alumina melt (300); and second step wherein a sapphire ingot (200) is grown by pulling the ingot from the alumina melt (300) in the crucible (20), while heating the crucible (20) using a heating coil (30). In the second step, with lowering of the liquid surface of the alumina melt (300) due to the growth of the sapphire ingot (200), the heating coil (30) is brought down such that the distance between the liquid surface and the heating coil is within a fixed range. Thus, at the time of growing the sapphire single crystal from the alumina melt, the sapphire single crystal is stably grown, and uniformity of the crystal qualities is improved.

SHONAI TOMOHIRO (JP)
FUKUDA TSUGUO (JP)

PCT/JP2011/053975

September 09, 2011

February 23, 2011

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SHOWA DENKO KK (JP)
SHONAI TOMOHIRO (JP)
FUKUDA TSUGUO (JP)

C30B29/20; C30B15/14; C30B15/28

JP2005001934A	2005-01-06
JP2008007353A	2008-01-17
JPH08231295A	1996-09-10
JPH09175889A	1997-07-08
JP2005324993A	2005-11-24
JP2003212691A	2003-07-30
JPH10324592A	1998-12-08

MOHAMMAD HOSSEIN TAVAKOLI ET AL.: "Numerical study of heat transport and fluid flow of melt and gas during the seeding process of sapphire Czochralski crystal growth", CRYSTAL GROWTH & DESIGN, vol. 7, no. 4, 2007, pages 644 - 651

FURUBE, Jiro et al. (JP)
Jiro Furube (JP)

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