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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND FILM FORMING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/281792
Kind Code:
A1
Abstract:
Provided are a method for manufacturing a semiconductor device and a film forming device, wherein the method and device can improve coverage while suppressing a decrease in productivity in a film forming step. The method for manufacturing a semiconductor device comprises a film forming step for forming a film on one surface of a substrate disposed inside a chamber by plasma CVD. In the film forming step, the plasma density in the chamber is changed according to a preset waveform while forming a film.

Inventors:
TABUCHI KIYOTAKA (JP)
NAGAHATA KAZUNORI (JP)
MIYATA YUJI (JP)
MIZOKAMI YUYA (JP)
SHIRATANI MASAHARU (JP)
KAMATAKI KUNIHIRO (JP)
Application Number:
PCT/JP2022/005573
Publication Date:
January 12, 2023
Filing Date:
February 14, 2022
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/31; H01L21/316; H01L21/318
Foreign References:
JPH0883776A1996-03-26
JP2004228409A2004-08-12
JPH0897208A1996-04-12
JP2011210715A2011-10-20
JP2009246091A2009-10-22
JPH05218005A1993-08-27
JP2014239091A2014-12-18
JP2010107680A2010-05-13
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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