METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - SUMITOMO ELECTRIC INDUSTRIES

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2012/093544

Kind Code:

A1

Abstract:

This method for manufacturing a MOSFET (100) comprises a step for preparing a silicon carbide substrate (1), a step for forming an active layer (7) on the silicon carbide substrate (1), a step for forming a gate oxide film (91) on the active layer (7), a step for forming a gate electrode (93) on the gate oxide film (91), a step for forming a source contact electrode (92) on the active layer (7), and a step for forming a source wiring (95) on the source contact electrode (92). The step for forming the source wiring (95) includes a step for forming an electroconductive film on the source contact electrode (92) and a step for processing the electroconductive film by etching the electroconductive film using reactive ion etching. The method for manufacturing the MOSFET (100) further comprises an annealing step in which the silicon carbide substrate (1) is heated to a temperature of 50°C or higher after the step for processing the electroconductive film.

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Inventors:

HIYOSHI TORU (JP)
MASUDA TAKEYOSHI (JP)

Application Number:

PCT/JP2011/078278

Publication Date:

July 12, 2012

Filing Date:

December 07, 2011

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)
HIYOSHI TORU (JP)
MASUDA TAKEYOSHI (JP)

International Classes:

H01L29/78; H01L21/28; H01L21/316; H01L21/3205; H01L21/336; H01L29/12; H01L29/739

Foreign References:

JP2006324565A	2006-11-30
JP2001094095A	2001-04-06
JP2010245334A	2010-10-28
JP2004288890A	2004-10-14
JP2002043252A	2002-02-08
JP2001358153A	2001-12-26

Other References:

SEI-HYUNG RYU ET AL.: "Critical Issues for MOS Based Power Devices in 4H-SiC", MATERIALS SCIENCE FORUM, vol. 615-617, 2009, pages 743 - 748

Attorney, Agent or Firm:

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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Claims:

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