METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2020/027130

A1

The present invention includes: forming an insulating film (10) on a surface of a semiconductor substrate (1) having semiconductor layers (4, 30); forming contact holes in the insulating film; forming, on the insulating film, conductor materials (11, 21, 31-33) connected to the semiconductor layers via the contact holes; and patterning the conductor materials. In addition, the insulating film is formed on the semiconductor layers, including on alignment keys (20) formed on surfaces of the layers. After the insulating film is formed, the insulating film is removed from regions serving as the alignment keys and from the vicinity of said regions to expose the semiconductor layers. Furthermore, the conductor materials are formed directly on the semiconductor layers exposed from the insulating film, and the patterning of the conductor materials is performed with respect to the alignment keys extending to the surfaces of the conductor materials.

WO/2014/008161	RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP MEMORY DEVICE
JP2021140853	SEMICONDUCTOR STORAGE DEVICE
JP6705810	Semiconductor device

KAJI AIKO (JP)
ICHIKAWA HARUHITO (JP)
MITANI SHUHEI (JP)
MIMURA TOMOHIRO (JP)
WAKASUGI YUKIHIRO (JP)
SOEJIMA NARUMASA (JP)

PCT/JP2019/029831

February 06, 2020

July 30, 2019

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DENSO CORP (JP)

H01L21/336; G03F7/20; H01L21/28; H01L21/316; H01L29/12; H01L29/78

JPH09223656A	1997-08-26
JPH02117124A	1990-05-01
JPH104139A	1998-01-06

YOU-I PATENT FIRM (JP)

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