Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/193602
Kind Code:
A1
Abstract:
The present disclosure provides a method for manufacturing a semiconductor device, comprising the following steps: providing a substrate; forming a stacked structure on the substrate, the top of the stacked structure being a cover layer; forming a mask structure on the cover layer, the mask structure comprising a mask layer and a pattern transfer layer sequentially stacked from top to bottom; performing first etching on the mask structure to form first blind holes, the first blind holes running through the mask structure and stopping in the cover layer; and performing second etching on the mask structure, and removing the mask layer to flatten the top surface of the pattern transfer layer and trim the bottoms of the first blind holes.
Inventors:
SHEN RUNSHENG (CN)
BAO XIFEI (CN)
ZHU CHANGLI (CN)
BAO XIFEI (CN)
ZHU CHANGLI (CN)
Application Number:
PCT/CN2021/120084
Publication Date:
September 22, 2022
Filing Date:
September 24, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108
Foreign References:
| CN113066761A | 2021-07-02 | |||
| CN111863826A | 2020-10-30 | |||
| CN109545790A | 2019-03-29 | |||
| CN110323181A | 2019-10-11 | |||
| CN112408314A | 2021-02-26 | |||
| CN105448841A | 2016-03-30 | |||
| US10304744B1 | 2019-05-28 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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