Title:
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/193603
Kind Code:
A1
Abstract:
A semiconductor structure and a formation method therefor. The formation method comprises: providing a substrate; forming a first dielectric layer on the substrate, and then forming a plurality of broken line-shaped first mask patterns on the first dielectric layer, the first mask patterns extending in a first direction; forming a plurality of broken line-shaped second mask patterns on the first mask patterns, the second mask patterns extending in a second direction, the second direction being different from the first direction, and the projections of the first mask patterns and the second mask patterns on the first dielectric layer overlapping and forming polygons; and etching the first dielectric layer by using the second mask patterns and the first mask patterns as a mask to form openings.
Inventors:
CAO KAI (CN)
Application Number:
PCT/CN2021/120121
Publication Date:
September 22, 2022
Filing Date:
September 24, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242
Foreign References:
| CN111640705A | 2020-09-08 | |||
| CN111524795A | 2020-08-11 | |||
| CN110634733A | 2019-12-31 | |||
| CN112349588A | 2021-02-09 | |||
| CN111199875A | 2020-05-26 | |||
| CN108155149A | 2018-06-12 | |||
| US20050269620A1 | 2005-12-08 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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