Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/163070
Kind Code:
A1
Abstract:
This method for manufacturing a semiconductor device comprises: a step for preparing a first substrate having a first support substrate, a first insulating film, and a first electrode provided in a first recess of the first insulating film; a step for preparing a second substrate having a second support substrate, a second insulating film, and a second electrode provided in a second recess of the second insulating film; a step for sticking together the first insulating film of the first substrate and the second insulating film of the second substrate; and a step for joining the first electrode of the first substrate and the second electrode of the second substrate. The first insulating film includes an organic insulating film. The first electrode includes a first electrode body provided in the first recess, a first barrier metal that is provided in at least one of the inner surface and the bottom surface of the first recess and that covers a part of the first electrode body, and a second barrier metal that covers the surface of the first electrode body at the opening side of the first recess. The adhesion strength between the first insulating film and the first barrier metal is 30 MPa or more.
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Inventors:
TOBA MASAYA (JP)
MITSUKURA KAZUYUKI (JP)
NOMA HIROKAZU (JP)
MITSUKURA KAZUYUKI (JP)
NOMA HIROKAZU (JP)
Application Number:
PCT/JP2023/006566
Publication Date:
August 31, 2023
Filing Date:
February 22, 2023
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
H01L21/02; H01L21/3205; H01L21/768; H01L23/522; H01L23/532; H01L25/065; H01L25/07; H01L25/18; H01L27/00
Foreign References:
| JP2013533629A | 2013-08-22 | |||
| JP2001102382A | 2001-04-13 | |||
| JP2017073530A | 2017-04-13 | |||
| JP2001298028A | 2001-10-26 | |||
| JP2012216722A | 2012-11-08 | |||
| JP2006016684A | 2006-01-19 | |||
| JP2007318141A | 2007-12-06 | |||
| JP2012504347A | 2012-02-16 | |||
| JP2012019148A | 2012-01-26 | |||
| JP2018528622A | 2018-09-27 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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