Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR POWER DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/099786
Kind Code:
A1
Abstract:
The present invention belongs to the technical field of semiconductor power devices, and in particular a method for manufacturing a semiconductor power device is disclosed. The method comprises: forming a first insulating dielectric layer, the first insulating dielectric layer covering a side wall and the bottom of a second trench; forming a layer of photoresist, the photoresist filling the second trench; and performing photoetching to expose the portion of the first insulating dielectric layer that is located in the second trench and close to one side of an n-type substrate, and etching away the portion of the first insulating dielectric layer that is located in the second trench and close to one side of the n-type substrate. According to the method for manufacturing the semiconductor power device, a grid electrode is isolated from a shielding grid by means of the first insulating dielectric layer, the grid-source capacitance can be reduced by increasing the thickness of the first insulating dielectric layer, the grid-source leakage is reduced, and the reliability of the semiconductor power device is improved.
Inventors:
MAO ZHENDONG (CN)
XU ZHENYI (CN)
LIU WEI (CN)
LIU LEI (CN)
XU ZHENYI (CN)
LIU WEI (CN)
LIU LEI (CN)
Application Number:
PCT/CN2020/131291
Publication Date:
May 19, 2022
Filing Date:
November 25, 2020
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L21/02; H01L21/8234; H01L21/308; H01L29/423
Foreign References:
| CN111785642A | 2020-10-16 | |||
| CN109979823A | 2019-07-05 | |||
| CN109830526A | 2019-05-31 | |||
| US10811502B1 | 2020-10-20 | |||
| US20200044078A1 | 2020-02-06 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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