Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/205736
Kind Code:
A1
Abstract:
The embodiments of the present application provide a method for manufacturing a semiconductor structure, comprising: successively forming a target layer, a first mask layer, an isolation layer and an intermediate layer on a substrate, the intermediate layer in a first zone having at least one first recess, and the intermediate layer in a second zone having at least one second recess; forming filling layers, the filling layers filling the first recess and the second recess, the upper surfaces of the filling layers being higher than the upper surface of the intermediate layer, and the height difference between the top surface of the filling layer on the first zone and the top surface of the filling layer on the second zone being less than or equal to a first preset value; performing a maskless dry etching process to remove a part of the filling layer on the first zone until the top surface of a sacrificial layer is exposed; removing the sacrificial layer covering a side wall of the first recess so as to form a first opening on the first zone; and etching a part of the target layer by using the first opening, the remaining target layer constituting a target pattern. The embodiments of the present application are conducive to completely etching a target layer to form a required target pattern.
Inventors:
GUO SHUAI (CN)
Application Number:
PCT/CN2021/112301
Publication Date:
October 06, 2022
Filing Date:
August 12, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/308
Foreign References:
| CN103380484A | 2013-10-30 | |||
| US20120178235A1 | 2012-07-12 | |||
| CN103367259A | 2013-10-23 |
Attorney, Agent or Firm:
BEIJING LINKAW PATENT ATTORNEY LAW FIRM (CN)
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