Title:
METHOD AND MEMORY USED FOR REDUCING PROGRAM DISTURBANCE BY ADJUSTING VOLTAGE OF DUMMY WORD LINE
Document Type and Number:
WIPO Patent Application WO/2021/114014
Kind Code:
A1
Abstract:
A memory includes an upper deck and a lower deck. The upper deck includes a first upper dummy word line. The lower deck includes a first lower dummy word line. A method for reducing program disturbance of the memory includes adjusting a first upper bias voltage applied to the first upper dummy word line and/or a first upper threshold voltage of the first upper dummy word line to adjust a first difference between the first upper bias voltage and the first upper threshold voltage; and adjusting a first lower bias voltage applied to the first lower dummy word line and/or a first lower threshold voltage of the first lower dummy word line to adjust a second difference between the first lower bias voltage and the first lower threshold voltage.
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Inventors:
SONG YALI (CN)
JIA JIANQUAN (CN)
YOU KAIKAI (CN)
ZHANG AN (CN)
ZHAO XIANGNAN (CN)
CUI YING (CN)
LI SHAN (CN)
LI KAIWEI (CN)
JIN LEI (CN)
HUANG XUEQING (CN)
LOU MENG (CN)
ZHANG JINLONG (CN)
JIA JIANQUAN (CN)
YOU KAIKAI (CN)
ZHANG AN (CN)
ZHAO XIANGNAN (CN)
CUI YING (CN)
LI SHAN (CN)
LI KAIWEI (CN)
JIN LEI (CN)
HUANG XUEQING (CN)
LOU MENG (CN)
ZHANG JINLONG (CN)
Application Number:
PCT/CN2019/123978
Publication Date:
June 17, 2021
Filing Date:
December 09, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/34; G11C16/08
Domestic Patent References:
| WO2017069869A1 | 2017-04-27 |
Foreign References:
| US20180358102A1 | 2018-12-13 | |||
| US20110222339A1 | 2011-09-15 | |||
| US20190279726A1 | 2019-09-12 | |||
| US20170330631A1 | 2017-11-16 | |||
| CN110211625A | 2019-09-06 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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