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Title:
METHOD FOR PLASMA ETCHING AND PLASMA ETCHING DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/031780
Kind Code:
A1
Abstract:
A plasma etching device for etching a substrate with a process gas converted to plasma comprises: a process container; a holding section provided in said process container for holding a substrate; an electrode plate provided in said process container and facing said holding section; a plurality of supply sections arranged at respectively different positions in the radial direction of said substrate for supplying a process gas to a space sandwiched between said holding section and said electrode plate; a high frequency power source for converting to plasma the process gas supplied to said space by said plurality of supply sections by supplying high frequency electric power to at least either said holding section or said electrode plate; an adjustment means for adjusting the supply conditions for the process gas for each of said plurality of supply sections; and a control unit for controlling said adjustment means such that said supply conditions differ between a position where the effect of diffusion of process gas supplied is greater than the effect of flow of process gas supplied and a position where the effect of flow of said supplied process gas is greater than the effect of diffusion of said supplied process gas in a concentration distribution for active species included in the plasma-converted process gas on said substrate.

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Inventors:
KAWAMATA MASAYA (JP)
HONDA MASANOBU (JP)
KUBOTA KAZUHIRO (JP)
Application Number:
PCT/JP2012/071723
Publication Date:
March 07, 2013
Filing Date:
August 28, 2012
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
KAWAMATA MASAYA (JP)
HONDA MASANOBU (JP)
KUBOTA KAZUHIRO (JP)
International Classes:
H01L21/3065
Foreign References:
JP2008047687A2008-02-28
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Download PDF:
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Claims:



 
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