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Patent Searching and Data


Title:
METHOD FOR PREPARING BORON-DOPED SELECTIVE EMITTER BATTERY
Document Type and Number:
WIPO Patent Application WO/2023/045279
Kind Code:
A1
Abstract:
Disclosed in the present invention is a method for preparing a boron-doped selective emitter battery. The method comprises preparing a mask before boron diffusion; the preparation of the mask comprises the following steps: chained deposition of a mask precursor, chained curing of the mask precursor, and laser grooving of the mask. According to the present invention, a precursor chained deposition and curing film formation method is used, such that the precursor is quickly cross-linked to form a film on the surface of a silicon wafer, in order to obtain a mask with a relatively high compactness. According to the present invention, a chained process is used in precursor deposition and curing, and complex feeding and discharging processes are not needed, thereby achieving a good size compatibility of the silicon wafer.

Inventors:
REN CHANGRUI (CN)
ZHANG JIAZHOU (CN)
GAO ZHIKUN (CN)
FU LIMING (CN)
Application Number:
PCT/CN2022/081389
Publication Date:
March 30, 2023
Filing Date:
March 17, 2022
Export Citation:
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Assignee:
CHANGZHOU SHICHUANG ENERGY CO LTD (CN)
International Classes:
H01L31/18
Foreign References:
CN113871512A2021-12-31
CN111370539A2020-07-03
CN111834492A2020-10-27
CN105408986A2016-03-16
CN112186074A2021-01-05
CN111063770A2020-04-24
CN113363334A2021-09-07
JP2010253862A2010-11-11
Attorney, Agent or Firm:
SUZHOU MAMBO PATENT AGENCY (GENERAL PARTNERSHIP) (CN)
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