Title:
METHOD FOR PREPARING POLYSILICON THIN FILM, METHOD FOR PREPARING THIN FILM TRANSISTOR ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/014966
Kind Code:
A1
Abstract:
Provided is a method for preparing a polysilicon thin film, the method comprising: applying a semiconductor deposition process so as to prepare and form a first amorphous silicon thin film (2a); applying an excimer laser annealing process to crystallize the first amorphous silicon thin film (2a) so as to form a polysilicon thin film (2); applying a semiconductor deposition process so as to prepare and form a second amorphous silicon thin film (3) on a first surface (2b) of the polysilicon thin film (2); applying a dry-etching process so as to etch along a direction from the second amorphous silicon thin film (3) toward the polysilicon thin film (2) until the second amorphous silicon thin film (3) is completely removed. Further provided is a method for preparing a thin-film-transistor array substrate, the method comprising a step of preparing an active layer (20): according to the foregoing method for preparing a polysilicon thin film (2), preparing and forming a layer of a polysilicon thin film; applying a photolithography process to etch the polysilicon thin film (2) so as to form a patterned active layer (20).
Inventors:
DONG LEILEI (CN)
Application Number:
PCT/CN2017/095514
Publication Date:
January 24, 2019
Filing Date:
August 01, 2017
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L21/3213; H01L21/3205; H01L21/77
Foreign References:
| CN104752203A | 2015-07-01 | |||
| CN104362084A | 2015-02-18 | |||
| CN104241140A | 2014-12-24 | |||
| CN104485276A | 2015-04-01 | |||
| US20150287769A1 | 2015-10-08 |
Attorney, Agent or Firm:
MING & YUE INTELLECTUAL PROPERTY LAW FIRM (CN)
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