Title:
METHOD OF PREPARING SELF-ALIGNING MRAM BOTTOM ELECTRODE
Document Type and Number:
WIPO Patent Application WO/2020/258799
Kind Code:
A1
Abstract:
The present invention provides a method of preparing a self-aligning MRAM bottom electrode, comprising: providing a substrate, said substrate sequentially comprising a metal interconnect layer, a first barrier layer, and a dielectric layer, a bottom via being formed in the first barrier layer and the dielectric layer, said bottom via being connected to the metal interconnect layer, the surface of the substrate being sequentially covered by a second barrier layer and a conductive metal layer, and the conductive metal layer filling the bottom via; performing chemical-mechanical polishing on the conductive metal layer to remove the conductive metal layer on the outside of the bottom via and to form a recess of a desired depth within the bottom via; depositing a bottom electrode metal layer to completely fill the recess; and performing chemical-mechanical polishing on the bottom electrode metal layer, up to the dielectric layer, so as to form an MRAM bottom electrode within the recess. The present invention simplifies the process of preparing a bottom electrode in an MRAM, and makes it possible to achieve precision alignment in the photolithography process.
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Inventors:
WANG LEI (CN)
JIANG XIN (CN)
LIU LUPING (CN)
JIANG XIN (CN)
LIU LUPING (CN)
Application Number:
PCT/CN2019/128702
Publication Date:
December 30, 2020
Filing Date:
December 26, 2019
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08; H01L27/22
Foreign References:
| CN109713006A | 2019-05-03 | |||
| CN109873076A | 2019-06-11 | |||
| CN105308738A | 2016-02-03 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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