Title:
METHOD FOR PRODUCING ALN SINGLE CRYSTALS, ALN SINGLE CRYSTALS, AND DEVICE FOR PRODUCING ALN SINGLE CRYSTALS
Document Type and Number:
WIPO Patent Application WO/2023/162936
Kind Code:
A1
Abstract:
Provided are: a method for producing AlN single crystals, the method capable of producing AIN single crystals at low cost and in a continuous manner; AlN single crystals; and a device for producing AlN single crystals. The method for produing AlN single crystals includes: a melt formation step for heating and melting an alloy containing Al to form a melt of the alloy; and a deposition step for depositing AlN single crystals while providing a temperature gradient to the melt by cooling a part of the melt. In the deposition step, by bringing a nitrogen-containing gas into contact with a high-temperature section of the melt and holding AlN seed crystals or a crystal growth substrate for single crystals in a low-temperature section in the melt, with nitrogen being taken into the melt in the high-temperature section, AlN single crystals are deposited on the AlN seed crystals or on the substrate in the low-temperature section, and thereby AlN single crystals continuously grow.
Inventors:
FUKUYAMA HIROYUKI (JP)
OHTSUKA MAKOTO (JP)
ADACHI MASAYOSHI (JP)
MIYATA RINTARO (JP)
WATANABE YASUHIRO (JP)
OHTSUKA MAKOTO (JP)
ADACHI MASAYOSHI (JP)
MIYATA RINTARO (JP)
WATANABE YASUHIRO (JP)
Application Number:
PCT/JP2023/006081
Publication Date:
August 31, 2023
Filing Date:
February 20, 2023
Export Citation:
Assignee:
UNIV TOHOKU (JP)
DOWA HOLDINGS CO LTD (JP)
DOWA HOLDINGS CO LTD (JP)
International Classes:
C30B29/38; C30B17/00; C30B19/02
Foreign References:
| JP2015189651A | 2015-11-02 | |||
| JP2016155711A | 2016-09-01 | |||
| JP2019194133A | 2019-11-07 | |||
| JP2015006975A | 2015-01-15 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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