Title:
METHOD FOR PRODUCING DIAMOND LAMINATED SILICON WAFER, AND DIAMOND LAMINATED SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2019/017330
Kind Code:
A1
Abstract:
The present invention provides a method for producing a diamond laminated silicon wafer having a diamond layer in which diamond particles are reduced in particle size. The method for producing a diamond laminated silicon wafer 100 according to the present invention is characterized in that diamond particles 14 are deposited on a silicon wafer 10 having an oxygen concentration of 5×1017
atom/cm3 or less, and then a diamond layer 16 is grown on the silicon wafer 10 by chemical vapor deposition using the diamond particles 14 as nuclei.
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Inventors:
KOGA YOSHIHIRO (JP)
Application Number:
PCT/JP2018/026715
Publication Date:
January 24, 2019
Filing Date:
July 17, 2018
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/04; C23C16/27; C30B25/18; H01L21/205
Foreign References:
| JPH1081589A | 1998-03-31 | |||
| JP2012076982A | 2012-04-19 | |||
| JP2009091234A | 2009-04-30 | |||
| JP2010070405A | 2010-04-02 | |||
| JP2005306617A | 2005-11-04 |
Other References:
See also references of EP 3656896A4
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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