Title:
METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2023/243259
Kind Code:
A1
Abstract:
The present invention is a method for producing a heteroepitaxial wafer in which a 3C-SiC single crystal film is heteroepitaxially grown on a single crystal silicon substrate, said method comprising: a first step for removing a natural oxide film on a surface of a single crystal silicon substrate by hydrogen baking using a low-pressure CVD device; a second step for forming a SiC nucleus on the single crystal silicon substrate at a pressure of 13-13,332 Pa and a temperature of 600-1200℃ while supplying a source gas containing carbon; and a third step for growing a SiC single crystal at a pressure of 13-13,332 Pa and a temperature of not less than 800°C but less than 1200°C, while supplying a source gas containing carbon and silicon, to form a 3C-SiC single crystal film. Thus, provided is a method for producing a heteroepitaxial wafer that makes it possible to efficiently epitaxially grow a good 3C-SiC single crystal film on a single crystal silicon substrate.
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Inventors:
MATSUBARA TOSHIKI (JP)
SUZUKI ATSUSHI (JP)
OHTSUKI TSUYOSHI (JP)
ABE TATSUO (JP)
SUZUKI ATSUSHI (JP)
OHTSUKI TSUYOSHI (JP)
ABE TATSUO (JP)
Application Number:
PCT/JP2023/017373
Publication Date:
December 21, 2023
Filing Date:
May 09, 2023
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B29/36; C23C16/24; C30B25/18; H01L21/20; H01L21/205
Foreign References:
| JPH07165497A | 1995-06-27 | |||
| JP2005347666A | 2005-12-15 | |||
| JPH02267197A | 1990-10-31 | |||
| JPH11228297A | 1999-08-24 | |||
| JP2000264792A | 2000-09-26 | |||
| JPH026388A | 1990-01-10 | |||
| JP2012171830A | 2012-09-10 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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