METHOD FOR PRODUCING PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY

WIPO Patent Application WO/2022/010201

A1

The present invention relates to a method for producing a pellicle for extreme ultraviolet lithography. The present invention provides a method for producing a pellicle for extreme ultraviolet lithography, the method comprising the steps of: a) forming a silicon carbide layer on one surface of a substrate; b) forming a metal catalyst layer on the silicon carbide layer; c) forming a solid carbon source layer on the metal catalyst layer; d) heat-treating so that at least a portion of the solid carbon source layer spreads to the metal catalyst layer and is supersaturated, thereby enabling a graphene layer to be formed between the silicon carbide layer and the metal catalyst layer; and e) removing the metal catalyst layer. According to the method for producing a pellicle for extreme ultraviolet lithography, according to the present invention, the graphene layer is instantly formed on the silicon carbide layer in the heat treatment process. Thus, a binding force between the silicon carbide layer and the graphene layer is improved.

YU LAN (KR)
CHO SANG JIN (KR)
KIM KYOUNG SOO (KR)
SEO KYOUNG WON (KR)
MOON SEONG YONG (KR)
KIM JI KANG (KR)
YOU JANG DONG (KR)

PCT/KR2021/008492

January 13, 2022

July 05, 2021

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FINE SEMITECH CORP (KR)

G03F1/62; G03F1/22

KR20190003752A	2019-01-09
KR20100111447A	2010-10-15
CN103204495A	2013-07-17
KR20190013460A	2019-02-11
JP2019168502A	2019-10-03

DYNE PATENT & LAW FIRM (KR)

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