Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/249905
Kind Code:
A1
Abstract:
A method for producing a semiconductor device according to one embodiment of the present disclosure comprises: forming a multilayer body by alternately stacking insulating films and sacrificial films on a substrate; forming a through hole in the multilayer body, the through hole extending in the stacking direction of the multilayer body; forming a block insulating film, a charge collecting film, a tunnel insulating film and a channel film in this order on the inner surface of the through hole; providing the multilayer body with a slit that is different from the through hole and extends in the stacking direction of the multilayer body; removing the sacrificial films via the slit so as to form a cavity between insulating films that are adjacent thereto; forming a first metal oxide film on the inner surface of the cavity; forming a second metal oxide film on the first metal oxide film, the second metal oxide film being crystallized at a lower temperature than the first metal oxide film; and burying an electrode layer in the cavity.
Inventors:
OTSUKI SARA (JP)
NAKAMURA GENJI (JP)
OTANI MUNEYUKI (JP)
TAKAHASHI KAZUYA (US)
NAKAMURA GENJI (JP)
OTANI MUNEYUKI (JP)
TAKAHASHI KAZUYA (US)
Application Number:
PCT/JP2022/020270
Publication Date:
December 01, 2022
Filing Date:
May 13, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/324; H01L27/11568; H01L27/11582
Domestic Patent References:
| WO2021020084A1 | 2021-02-04 |
Foreign References:
| JP2019054149A | 2019-04-04 | |||
| JP2012146915A | 2012-08-02 | |||
| JP2018137388A | 2018-08-30 | |||
| JP2018137299A | 2018-08-30 | |||
| JP2020178111A | 2020-10-29 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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