METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND, AND SINGLE CRYSTAL DIAMOND

Title:

METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND, AND SINGLE CRYSTAL DIAMOND

Document Type and Number:

WIPO Patent Application WO/2023/276443

Kind Code:

A1

Abstract:

Provided are: a method for producing single crystal diamond, whereby it becomes possible to synthesize single crystal diamond having excellent durability at low cost within a short time; and single crystal diamond. In the method for producing single crystal diamond, a high-temperature high-pressure method is employed, and the single crystal diamond is synthesized by exposing a starting material comprising amorphous carbon and a carbon compound to a pressure and a temperature each of which falls within a region where diamond is thermally stable in a carbon phase equilibrium diagram.

Inventors:

OSHIMA RYUJI (JP)
IIZUKA KANJI (JP)
SHAKHOV FEDOR (RU)
VUL ALEXANDER (RU)

Application Number:

PCT/JP2022/019412

Publication Date:

January 05, 2023

Filing Date:

April 28, 2022

Export Citation:

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Assignee:

DISCO CORP (JP)
IOFFE INST (RU)

International Classes:

C30B29/04; B01J3/06; C30B1/00

Domestic Patent References:

WO2015038031A1	2015-03-19
WO2018101347A1	2018-06-07

Foreign References:

JP2011040427A	2011-02-24
JP2004079980A	2004-03-11
JP2017031056A	2017-02-09
JP7033824B1	2022-03-11
JP2013202446A	2013-10-07

Other References:

SUMIYA HITOSHI: "High pressure synthesis of a large high-quality single crystal diamond", ŌYŌ BUTSURI, vol. 95, no. 7, 10 July 2016 (2016-07-10), pages 585 - 589, XP009542300, ISSN: 0369-8009, DOI: 10.11470/oubutsu.85.7_585
SHAKHOV FEDOR M.; ABYZOV ANDREY M.; TAKAI KAZUYUKI: "Boron doped diamond synthesized from detonation nanodiamond in a C-O-H fluid at high pressure and high temperature", JOURNAL OF SOLID STATE CHEMISTRY, vol. 256, 1 December 2017 (2017-12-01), US , pages 72 - 92, XP085229856, ISSN: 0022-4596, DOI: 10.1016/j.jssc.2017.08.009