Title:
METHOD FOR PRODUCING TRICHLOROSILANE AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD
Document Type and Number:
WIPO Patent Application WO/2023/074872
Kind Code:
A1
Abstract:
[Problem] To provide a method in which a hydrogen-containing discharge gas from trichlorosilane production can be effectively utilized industrially. [Solution] Provided is a trichlorosilane production method comprising reacting silicon metal, tetrachlorosilane, and a hydrogen-containing mixture gas to yield trichlorosilane, characterized in that the hydrogen-containing mixture gas contains 1-500 mol ppm hydrogen chloride and 100-10,000 mol ppm hydrogenated silane and that the mixture gas is heated at 100-450°C and then reacted.
Inventors:
SAKAI JUNYA (JP)
IIYAMA SHOJI (JP)
MATSUMURA KUNIHIKO (JP)
IIYAMA SHOJI (JP)
MATSUMURA KUNIHIKO (JP)
Application Number:
PCT/JP2022/040486
Publication Date:
May 04, 2023
Filing Date:
October 28, 2022
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B33/107; C01B33/035
Domestic Patent References:
| WO2018074268A1 | 2018-04-26 |
Foreign References:
| JP2014043389A | 2014-03-13 |
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
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