Title:
METHOD FOR THE PRODUCTION OF A PLURALITY OF OPTO-ELECTRONIC SEMICONDUCTOR CHIPS AND OPTO-ELECTRONIC SEMICONDUCTOR CHIP
Document Type and Number:
WIPO Patent Application WO2005013316
Kind Code:
A3
Abstract:
The invention relates to a method for the production of a plurality of opto-electronic semiconductor chips respectively comprising a plurality of structural elements respectively consisting of at least one semiconductor layer. According to the inventive method, a chip composite base is produced, said base comprising a substrate and an epitaxial surface. A non-closed mask material layer is grown on the epitaxial surface. The mask material layer consists of a plurality of statistically distributed windows having various forms and/or opening surfaces. A masking material is selected in such a way that a semiconductor material of the semiconductor layer, which is grown in a later step of the inventive method, cannot grow on said material or grows in a substantially worse manner in comparison with the epitaxial surface. Subsequently, semiconductor layers are deposited on the epitaxial surface in an essentially simultaneous manner on areas located inside the windows. In another step of the inventive method, the chip composite base with deposited material is separated to form semiconductor chips. The invention also relates to an optoelectronic semiconductor element produced according to said method.
Inventors:
HAERLE VOLKER (DE)
Application Number:
PCT/DE2004/001594
Publication Date:
March 31, 2005
Filing Date:
July 22, 2004
Export Citation:
Assignee:
OSRAM OPTO SEMICONDUCTORS GMBH (DE)
HAERLE VOLKER (DE)
HAERLE VOLKER (DE)
International Classes:
H01L21/20; H01L33/00; (IPC1-7): H01L21/20; H01L33/00
Foreign References:
| EP0472221A2 | 1992-02-26 | |||
| EP1005067A2 | 2000-05-31 | |||
| US6110277A | 2000-08-29 | |||
| EP0388733A1 | 1990-09-26 |
Other References:
YANG J W ET AL: "Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 76, no. 3, 17 January 2000 (2000-01-17), pages 273 - 275, XP012025677, ISSN: 0003-6951
MIYATA NORIYUKI ET AL: "Selective growth of nanocrystalline Si dots using an ultrathin-Si-oxide/oxynitride mask", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 77, no. 11, 11 September 2000 (2000-09-11), pages 1620 - 1622, XP012026105, ISSN: 0003-6951
PATENT ABSTRACTS OF JAPAN vol. 017, no. 676 (E - 1475) 13 December 1993 (1993-12-13)
MIYATA NORIYUKI ET AL: "Selective growth of nanocrystalline Si dots using an ultrathin-Si-oxide/oxynitride mask", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 77, no. 11, 11 September 2000 (2000-09-11), pages 1620 - 1622, XP012026105, ISSN: 0003-6951
PATENT ABSTRACTS OF JAPAN vol. 017, no. 676 (E - 1475) 13 December 1993 (1993-12-13)
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