Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
METHOD FOR REDUCING DEFECT OF SEMICONDUCTOR SUBSTRATE AND DEFECT REDUCING DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/067588
Kind Code:
A1
Abstract:
Provided are a method for reducing defects of a semiconductor substrate, and a defect reducing device, wherein the defects in a semiconductor substrate can be reduced by a low-temperature treatment on or below 150°C. The semiconductor substrate is exposed to a gas atmosphere containing water vapor after being exposed to a gas atmosphere containing hydrogen plasma or hydrogen radical.

Inventors:
SAMESHIMA TOSHIYUKI (JP)
Application Number:
PCT/JP2009/006707
Publication Date:
June 17, 2010
Filing Date:
December 08, 2009
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
UNIV TOKYO NAT UNIV CORP (JP)
SAMESHIMA TOSHIYUKI (JP)
International Classes:
H01L21/322; H01L21/324
Foreign References:
JP2002208707A2002-07-26
JPH05235040A1993-09-10
JP2004288864A2004-10-14
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: BOOKBINDING SYSTEM, ADHESIVE APPLYING DEVICE FOR BOOKBINDING, AND ADHESIVE SHEET

Next Patent: METHOD FOR PRODUCING Β-ALKOXYPROPIONAMIDE