Title:
METHODS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/161436
Kind Code:
A1
Abstract:
This method for manufacturing a silicon carbide semiconductor device comprises: a step of forming an insulating film on a portion of an upper part of a silicon carbide layer; a step of forming an ohmic electrode on the silicon carbide layer adjoining the insulating film; a step of removing an oxide layer on the ohmic electrode; a step of opening a side opposite the side on which the ohmic electrode adjoins the insulating film, and forming a mask on the ohmic electrode from which the oxide layer has been removed and the insulating film; and a step of wet etching a film to be etched by hydrofluoric acid with the mask formed. This method for manufacturing a silicon carbide semiconductor device is capable of manufacturing a silicon carbide semiconductor device which has less defects.
Inventors:
HINO SHIRO (JP)
SADAMATSU KOJI (JP)
SADAMATSU KOJI (JP)
Application Number:
PCT/JP2020/005461
Publication Date:
August 19, 2021
Filing Date:
February 13, 2020
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/336; H01L29/78; H01L29/12; H01L29/872
Domestic Patent References:
| WO2016052261A1 | 2016-04-07 | |||
| WO2017169086A1 | 2017-10-05 |
Foreign References:
| JP2014157896A | 2014-08-28 | |||
| JP2014067754A | 2014-04-17 | |||
| JP2019106425A | 2019-06-27 | |||
| JP2015185617A | 2015-10-22 |
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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