Title:
METHODS FOR PRODUCING LOW OXYGEN SILICON INGOTS
Document Type and Number:
WIPO Patent Application WO/2014/190165
Kind Code:
A3
Abstract:
An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.
Inventors:
BASAK SOUBIR (US)
HUDSON CARISSIMA M (US)
SAMANTA GAURAB (US)
RYU JAE WOO (US)
SREEDHARAMURTHY HARIPRASAD (US)
MCCALLUM KIRK D (US)
LEE HYUNGMIN (US)
HUDSON CARISSIMA M (US)
SAMANTA GAURAB (US)
RYU JAE WOO (US)
SREEDHARAMURTHY HARIPRASAD (US)
MCCALLUM KIRK D (US)
LEE HYUNGMIN (US)
Application Number:
PCT/US2014/039164
Publication Date:
March 26, 2015
Filing Date:
May 22, 2014
Export Citation:
Assignee:
SUNEDISON SEMICONDUCTOR LTD (SG)
BASAK SOUBIR (US)
BASAK SOUBIR (US)
International Classes:
C30B29/06; C30B15/30
Domestic Patent References:
| WO2009025340A1 | 2009-02-26 |
Foreign References:
| US20110304081A1 | 2011-12-15 | |||
| US20090235861A1 | 2009-09-24 |
Other References:
YONGTAO WANG ET AL: "Numerical simulation of effects of cusp magnetic field on oxygen concentration of 300 mm CZ-Si", RARE METALS, vol. 31, no. 5, 5 October 2012 (2012-10-05), pages 494 - 499, XP055133230, ISSN: 1001-0521, DOI: 10.1007/s12598-012-0546-z
SIM B C ET AL: "Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 275, no. 3-4, 1 March 2005 (2005-03-01), pages 455 - 459, XP027850580, ISSN: 0022-0248, [retrieved on 20050301]
WETZEL TH ET AL: "Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 230, no. 1-2, 1 August 2001 (2001-08-01), pages 81 - 91, XP004255573, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(01)01316-1
KAKIMOTO K: "HEAT AND MASS TRANSFER DURING CRYSTAL GROWTH", SCIENCE REPORTS OF THE RESEARCH INSTITUTES, TOHOKU UNIVERSITY,SERIES A : PHYSICS, CHEMISTRY AND METALLURGY, TOHOKU UNIV., SENDAI, JP, JP, vol. A41, no. 2, 1 January 1996 (1996-01-01), pages 107 - 112, XP000601008, ISSN: 0040-8808
SIM B C ET AL: "Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 275, no. 3-4, 1 March 2005 (2005-03-01), pages 455 - 459, XP027850580, ISSN: 0022-0248, [retrieved on 20050301]
WETZEL TH ET AL: "Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 230, no. 1-2, 1 August 2001 (2001-08-01), pages 81 - 91, XP004255573, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(01)01316-1
KAKIMOTO K: "HEAT AND MASS TRANSFER DURING CRYSTAL GROWTH", SCIENCE REPORTS OF THE RESEARCH INSTITUTES, TOHOKU UNIVERSITY,SERIES A : PHYSICS, CHEMISTRY AND METALLURGY, TOHOKU UNIV., SENDAI, JP, JP, vol. A41, no. 2, 1 January 1996 (1996-01-01), pages 107 - 112, XP000601008, ISSN: 0040-8808
Attorney, Agent or Firm:
MUNSELL, Michael G. et al. (7700 Forsyth Blvd.Suite 180, St. Louis Missouri, US)
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