Title:
MOLECULAR BEAM EPITAXY GROWTH METHOD FOR HIGH-SPEED VERTICAL-CAVITY SURFACE-EMITTING LASER
Document Type and Number:
WIPO Patent Application WO/2017/092093
Kind Code:
A1
Abstract:
Provided is a molecular beam epitaxy growth method for a high-speed vertical-cavity surface-emitting laser.The method comprises performing a deoxidation pretreatment on a GaAs substrate (100), and epitaxially growing a GaAs buffer layer, a lower DBR (20), an active region (10), an oxidation confinement layer (34) and an upper DBR (30) sequentially. In the growth process, the active region (10) is sandwiched between the upper DBR (30) and the lower DBR (20), and a ä-doping method is applied to the middle position of a potential barrier (11) of the active region (1 0 ), wherein carbon (C) is adopted as a doping source, and after the completion of ä-doping, the growth is stopped for a period of time under the protecti on of As.By means of the above-mentioned method, the technical problems of threshold reduction, differential gain increase and non-linear gain compression reduction are solved, and the good effects of optical loss reduction, line width decrease and output power and intrinsic bandwidth enhancment are achieved.
Inventors:
LI MIFENG (CN)
TANG BAO (CN)
TANG BAO (CN)
Application Number:
PCT/CN2015/098541
Publication Date:
June 08, 2017
Filing Date:
December 24, 2015
Export Citation:
Assignee:
WUHAN TELECOMM DEVICES CO LTD (CN)
International Classes:
H01S5/183; H01S5/343
Foreign References:
| CN101573844A | 2009-11-04 | |||
| US20150162493A1 | 2015-06-11 | |||
| US20040208216A1 | 2004-10-21 |
Other References:
HATORI, NOBUAKI ET AL.: "P-Type Delta-Doped InGaAs/GaAs Quantum Well Vertical-Cavity Surface-Emitting Lasers", ELECTRONICS AND COMMUNICATIONS IN JAPAN, vol. 82, no. 4, 31 December 1999 (1999-12-31), pages 54, XP000889277
HATORI, NOBUAKI ET AL.: "An Over 10-Gb/s Transmission Experiment Using a p-Type Delta-Doped InGaAs-GaAs Quantum-Well Vertical-Cavity Surface-Emitting Laser", IEEE PHOTONICS TECHNOLIGY LETTERS, vol. 10, no. 2, 28 February 1998 (1998-02-28), pages 194, XP000733803
AKRAM, M. NADEEM ET AL.: "Influence of base-region thickness on the performance of Pnp transistor-VCSEL", OPTICS EXPRESS, vol. 22, no. 2, 28 October 2014 (2014-10-28), pages 27398 - 27414
HATORI, NOBUAKI ET AL.: "An Over 10-Gb/s Transmission Experiment Using a p-Type Delta-Doped InGaAs-GaAs Quantum-Well Vertical-Cavity Surface-Emitting Laser", IEEE PHOTONICS TECHNOLIGY LETTERS, vol. 10, no. 2, 28 February 1998 (1998-02-28), pages 194, XP000733803
AKRAM, M. NADEEM ET AL.: "Influence of base-region thickness on the performance of Pnp transistor-VCSEL", OPTICS EXPRESS, vol. 22, no. 2, 28 October 2014 (2014-10-28), pages 27398 - 27414
Attorney, Agent or Firm:
BEIJING HUIZE INTELLECTUAL PROPERTY LAW LLC (CN)
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