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Title:
MOLYBDENUM SPUTTERING TARGET, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SPUTTERING FILM USING MOLYBDENUM SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2024/048664
Kind Code:
A1
Abstract:
This molybdenum sputtering target contains molybdenum. The molybdenum sputtering target contains crystal particles which have an average crystal particle diameter of less than 10μm, a relative density of 99.6% or higher, and an oxygen content of 100 mass ppm or less.

Inventors:
SHONO DAIKI (JP)
MESUDA MASAMI (JP)
Application Number:
PCT/JP2023/031580
Publication Date:
March 07, 2024
Filing Date:
August 30, 2023
Export Citation:
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Assignee:
TOSOH CORP (JP)
International Classes:
C23C14/34
Domestic Patent References:
WO2009107763A12009-09-03
WO2020054104A12020-03-19
WO2017033694A12017-03-02
Foreign References:
JP2011132563A2011-07-07
JPH10183341A1998-07-14
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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