Title:
MTJ BOTTOM ELECTRODE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/052009
Kind Code:
A1
Abstract:
A magnetic tunnel junction (MTJ) bottom electrode and a manufacturing method therefor. The MTJ bottom electrode comprises a bottom electrode substrate layer and a bottom electrode buffer layer laminated to each other. The lower surface of the bottom electrode substrate layer is in directly contact with the bottom conductive metal, and the upper surface of the bottom electrode buffer layer is in contact with an MTJ, wherein the atomic weight of the material of the bottom electrode buffer layer is less than that of the material of the bottom electrode substrate layer. According to the MTJ bottom electrode and the manufacturing method therefor, the etch selection ratio is increased, metal deposition contamination in the back-end MTJ etching process is reduced, and the bottom electrode material sputtered on the surface of the MTJ can be cleaned more easily.
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Inventors:
LI HUIHUI (CN)
Application Number:
PCT/CN2020/104919
Publication Date:
March 25, 2021
Filing Date:
July 27, 2020
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08
Foreign References:
| CN110112288A | 2019-08-09 | |||
| CN109980081A | 2019-07-05 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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