Title:
MULTI-ELEMENTS-DOPED ZINC OXIDE FILM, MANUFACTURING METHOD AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2012/129757
Kind Code:
A1
Abstract:
The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga2O3, Al2O3, SiO2 and ZnO according to the following percentage by mass: 0.5％~10 % of Ga2O3, 0.5%~5 % of Al2O3, 0.5％~1.5 % of SiO2, and the residue of ZnO; (2)sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2Pa~5Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15sccm~25sccm, adopting a sputtering power of 40W~200W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film.
Inventors:
ZHOU MINGJIE (CN)
WANG PING (CN)
CHEN JIXING (CN)
HUANG HUI (CN)
WANG PING (CN)
CHEN JIXING (CN)
HUANG HUI (CN)
Application Number:
PCT/CN2011/072144
Publication Date:
October 04, 2012
Filing Date:
March 25, 2011
Export Citation:
Assignee:
OCEANS KING LIGHTING SCIENCE (CN)
ZHOU MINGJIE (CN)
WANG PING (CN)
CHEN JIXING (CN)
HUANG HUI (CN)
ZHOU MINGJIE (CN)
WANG PING (CN)
CHEN JIXING (CN)
HUANG HUI (CN)
International Classes:
C04B35/453; C23C14/08; C23C14/35
Domestic Patent References:
| WO2009078329A1 | 2009-06-25 |
Foreign References:
| CN101208453A | 2008-06-25 | |||
| CN101189358A | 2008-05-28 | |||
| KR20090043774A | 2009-05-07 | |||
| JPH0632617A | 1994-02-08 | |||
| US20090197757A1 | 2009-08-06 |
Other References:
See also references of EP 2690192A4
Attorney, Agent or Firm:
SHENZHEN ZHONGYI PATENT AND TRADEMARK OFFICE (CN)
深圳中一专利商标事务所 (CN)
深圳中一专利商标事务所 (CN)
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Claims: