Title:
MULTI-LAYER SEMICONDUCTOR MATERIAL STRUCTURE AND PREPARATION METHOD
Document Type and Number:
WIPO Patent Application WO/2022/121408
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method, solving the problems in the art that semiconductor materials are poor in heat dissipation, high in cost, and unsuitable for mass production. The multi-layer semiconductor material structure comprises a high thermally-conductive support substrate and a crystallized device function layer. The device function layer is disposed on the high thermally-conductive support substrate, and the surface layer of the device function layer is a single crystal structure.
Inventors:
MU FENGWEN (CN)
WANG XINHUA (CN)
HUANG SEN (CN)
WEI KE (CN)
LIU XINYU (CN)
WANG XINHUA (CN)
HUANG SEN (CN)
WEI KE (CN)
LIU XINYU (CN)
Application Number:
PCT/CN2021/117424
Publication Date:
June 16, 2022
Filing Date:
September 09, 2021
Export Citation:
Assignee:
INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (CN)
International Classes:
H01L21/02; H01L23/373
Foreign References:
| US5373171A | 1994-12-13 | |||
| CN103305909A | 2013-09-18 | |||
| US20020038892A1 | 2002-04-04 | |||
| CN109671612A | 2019-04-23 | |||
| CN1564308A | 2005-01-12 |
Attorney, Agent or Firm:
BEIJING TIANDA INTELLECTUAL PROPERTY OFFICE (CN)
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