Title:
MULTI-RESISTIVE SPIN ELECTRONIC DEVICE, READ-WRITE CIRCUIT, AND IN-MEMORY BOOLEAN LOGIC OPERATOR
Document Type and Number:
WIPO Patent Application WO/2022/141226
Kind Code:
A1
Abstract:
The present disclosure provides a multi-resistive spin electronic device, comprising: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction located between the two electrodes and sequentially comprising, from top to bottom, a ferromagnetic reference layer, a barrier tunneling layer, a ferromagnetic free layer, and a spin-orbit coupling layer. Both ends of the ferromagnetic free layer are provided with nucleation centers for generating a magnetic domain wall; the spin-orbit coupling layer is connected to the bottom electrode, generates an electron spin current when applied with a write pulse, and drives the magnetic domain wall to move by means of spin-orbit torque; and interfaces of the spin-orbit coupling layer and the ferromagnetic free layer are provided with a plurality of local magnetic domain wall pinning centers for enhancing the interfacial Dzyaloshinskii-Moriya interaction coefficient strength. The device respectively drives and pins the magnetic domain wall in the ferromagnetic free layer by regulating spin coupling torque and the Dzyaloshinskii-Moriya interaction strength, so as to realize multi-resistive switching under a full electric field condition. The present disclosure further provides an in-memory computing Boolean logic and full-add operator based on the multi-resistive spin electronic device.
Inventors:
XING GUOZHONG (CN)
LIN HUAI (CN)
ZHANG FENG (CN)
WANG DI (CN)
LIU LONG (CN)
XIE CHANGQING (CN)
LI LING (CN)
LIU MING (CN)
LIN HUAI (CN)
ZHANG FENG (CN)
WANG DI (CN)
LIU LONG (CN)
XIE CHANGQING (CN)
LI LING (CN)
LIU MING (CN)
Application Number:
PCT/CN2020/141520
Publication Date:
July 07, 2022
Filing Date:
December 30, 2020
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
G11C11/02; H01L43/02
Domestic Patent References:
| WO2011115794A2 | 2011-09-22 |
Foreign References:
| CN111933789A | 2020-11-13 | |||
| CN105280806A | 2016-01-27 | |||
| US20190244646A1 | 2019-08-08 | |||
| CN111740011A | 2020-10-02 | |||
| US20150325278A1 | 2015-11-12 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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