Title:
MULTIFERROIC THIN FILM PRECURSOR AND PREPARATION METHOD THEREFOR, AND PREPARED FLEXIBLE MULTIFERROIC THIN FILM
Document Type and Number:
WIPO Patent Application WO/2024/016379
Kind Code:
A1
Abstract:
A multiferroic thin film precursor and a preparation method therefor, and a prepared flexible multiferroic thin film. The multiferroic thin film precursor is prepared from a metal salt, a complexing agent, and a solvent, and the metal salt comprises a bismuth salt, an iron salt, a magnesium salt, a calcium salt, and a titanium salt; the flexible multiferroic thin film comprises a flexible substrate, a buffer layer, a bottom electrode layer, and a multiferroic functional layer which are sequentially arranged from bottom to top; the buffer layer is a CoFe2O4 thin film layer, the bottom electrode layer is a SrRuO3 thin film layer, and the multiferroic functional layer is a (1-x)BiTi0.1Fe0.8Mg0.1O3-xCaTiO3 thin film layer, wherein x = 0.1-0.2. The flexible multiferroic thin film prepared from the multiferroic thin film precursor can simultaneously have good ferroelectricity and magnetism at room temperature, and has a linear magnetoelectric coupling effect. The polarization domain state of the flexible multiferroic thin film can be regulated by adjusting an external magnetic field, and eight logic storage states are realized.
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Inventors:
REN CHUANLAI (CN)
AN FENG (CN)
ZHONG GAOKUO (CN)
LI JIANGYU (CN)
AN FENG (CN)
ZHONG GAOKUO (CN)
LI JIANGYU (CN)
Application Number:
PCT/CN2022/109488
Publication Date:
January 25, 2024
Filing Date:
August 01, 2022
Export Citation:
Assignee:
SHENZHEN INST ADV TECH (CN)
International Classes:
C01G49/00
Domestic Patent References:
| WO2012094266A1 | 2012-07-12 |
Foreign References:
| CN108911730A | 2018-11-30 | |||
| CN101376600A | 2009-03-04 | |||
| CN113248248A | 2021-08-13 | |||
| CN108597875A | 2018-09-28 |
Attorney, Agent or Firm:
BEIJING WEIZHENG PATENT AGENCY CO., LTD. (CN)
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