NANOWIRE, DEVICE COMPRISING NANOWIRE, AND THEIR PRODUCTION METHODS

Title:

NANOWIRE, DEVICE COMPRISING NANOWIRE, AND THEIR PRODUCTION METHODS

Document Type and Number:

WIPO Patent Application WO/2008/072479

Kind Code:

A1

Abstract:

Disclosed is a nanowire comprising a nanowire main body made of a first material, and a plurality of semiconductor particles made of a second material and internally contained in at least a part of the nanowire main body.

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Inventors:

KAWASHIMA TAKAHIRO
SAITOH TOHRU

Application Number:

PCT/JP2007/073034

Publication Date:

June 19, 2008

Filing Date:

November 29, 2007

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD (JP)
KAWASHIMA TAKAHIRO
SAITOH TOHRU

International Classes:

B82B1/00; B82B3/00; C01B33/06; C30B29/62; H01L29/06; H01L31/10; H01L43/08

Foreign References:

JP2006140293A	2006-06-01
JP2004067433A	2004-03-04
JP2005532181A	2005-10-27
JP2006225258A	2006-08-31
JP2007184566A	2007-07-19
JP2007070136A	2007-03-22
JP2007050500A	2007-03-01
JP2007294908A	2007-11-08

Other References:

WU Y. ET AL.: "Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires", NANO LETTERS, vol. 2, no. 2, 13 February 2002 (2002-02-13), pages 83 - 86, XP055115359, DOI: doi:10.1021/nl0156888

Attorney, Agent or Firm:

OKUDA, Seiji (10th FloorOsaka Securities Exchange Bldg.,8-16, Kitahama 1-chome,Chuo-ku, Osaka-sh, Osaka 41, JP)

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