Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/040465
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a doped nitride-based semiconductor layer, and a gate electrode. The doped nitride-based semiconductor layer is disposed over the second nitride-based semiconductor layer and has an epitaxy portion making contact with the second nitride-based semiconductor layer and an amorphous portion connected to and located on the epitaxy portion. The gate electrode is disposed over the amorphous portion of the doped nitride-based semiconductor layer.
Inventors:
HE QINGYUAN (CN)
HAO RONGHUI (CN)
WANG WEI (CN)
HSIEH WEN-YUAN (CN)
SHAO LIXIANG (CN)
WONG KING YUEN (CN)
HAO RONGHUI (CN)
WANG WEI (CN)
HSIEH WEN-YUAN (CN)
SHAO LIXIANG (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2022/114500
Publication Date:
February 29, 2024
Filing Date:
August 24, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H01L21/335; H01L29/06; H01L29/20; H01L29/40; H01L29/43; H01L29/47; H01L29/423
Foreign References:
| CN111668101A | 2020-09-15 | |||
| CN103022116A | 2013-04-03 | |||
| CN110459595A | 2019-11-15 | |||
| CN114008792A | 2022-02-01 | |||
| CN114902424A | 2022-08-12 | |||
| US20060108606A1 | 2006-05-25 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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