Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/040515
Kind Code:
A1
Abstract:
A method for manufacturing a nitride-based semiconductor device is provided. The method includes steps as follows. An epitaxy structure is formed on a silicon-based substrate. An oxide structure is formed on the epitaxy structure. A mask layer having an opening is formed on the epitaxy structure such that at least one portion is exposed from the opening in a chamber. A first halogen-based gas is introduced into the chamber to remove the exposed portion of the oxide structure such that a portion of the epitaxy structure is exposed. A second halogen-based gas different than the first halogen-based gas is introduced into the chamber to remove the exposed portion of the epitaxy structure such that a portion of the silicon-based substrate is exposed.
Inventors:
OUYANG JUE (CN)
HAN YONG (CN)
ZHANG LIJIE (CN)
ZHANG XIAO (CN)
HSIEH WEN-YUAN (CN)
HAN YONG (CN)
ZHANG LIJIE (CN)
ZHANG XIAO (CN)
HSIEH WEN-YUAN (CN)
Application Number:
PCT/CN2022/114809
Publication Date:
February 29, 2024
Filing Date:
August 25, 2022
Export Citation:
Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/76; H01L21/335; H01L29/772; H01L29/778
Foreign References:
| CN112652660A | 2021-04-13 | |||
| CN105576012A | 2016-05-11 | |||
| CN114864685A | 2022-08-05 | |||
| CN113035841A | 2021-06-25 | |||
| CN114649409A | 2022-06-21 | |||
| JP2007165638A | 2007-06-28 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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