NITRIDE SEMICONDUCTOR DEVICE, AND SURFACE TREATMENT SYSTEM AND METHOD THEREFOR

WIPO Patent Application WO/2023/050268

A1

Provided in the present invention are a nitride semiconductor material, and a surface treatment system and method therefor. The surface treatment system comprises: a gas source module, a plasma source module, an ion filtering portion, and a reaction cavity, wherein the gas source module is used for first introducing a reducing gas into the plasma source module, and then introducing a nitrogen-based gas into the plasma source module after the reaction cavity is purged; the plasma source module is used for ionizing the reducing gas after the reducing gas is introduced, and ionizing the nitrogen-based gas after the nitrogen-based gas is introduced; and the ion filtering portion is used for performing ion filtering on an ionized substance set, wherein after filtration, an active group of hydrogen is attached to a surface of a material and may be subjected to a reduction reaction with an oxide layer, the oxide layer is treated without being damaged, and after an active group of nitrogen is attached to the surface of the material, the vacancy of nitrogen can be supplemented, thereby reducing dangling bonds and improving the surface quality.

ZHANG PENGHAO (CN)
WANG LUYU (CN)
XU MIN (CN)
WANG CHEN (CN)
YANG YANNAN (CN)
FAN RONG (CN)
ZHANG WEI (CN)
XU SAISHENG (CN)

PCT/CN2021/122080

April 06, 2023

September 30, 2021

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UNIV FUDAN (CN)

H01L21/67; H01J37/32; H01L21/02

CN112219260A	2021-01-12
CN104752201A	2015-07-01
CN111261554A	2020-06-09
US20080289650A1	2008-11-27
US20040086434A1	2004-05-06

SHANGHAI HUIHAN INTELLECTUAL PROPERTY LAW FIRM (CN)

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