Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/153266
Kind Code:
A1
Abstract:
This nitride semiconductor device comprises: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer; a third nitride semiconductor layer disposed on the second nitride semiconductor layer, having a ridge section in at least a portion thereof, and containing acceptor-type impurities; a gate electrode disposed on the ridge section; and a source electrode and a drain electrode disposed on the second nitride semiconductor layer with the ridge section interposed therebetween, wherein the nitride semiconductor device has an active region and a non-active region. The non-active region has a first region, and the film thickness of the second nitride semiconductor layer in the first region is different from the film thickness of the second nitride semiconductor layer in an area of the active region in which the ridge section, the source electrode, and the drain electrode are not formed.
Inventors:
OTAKE HIROTAKA (JP)
Application Number:
PCT/JP2021/001166
Publication Date:
August 05, 2021
Filing Date:
January 15, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/778; H01L21/337; H01L29/808
Foreign References:
| JP2015204304A | 2015-11-16 | |||
| JP2012523697A | 2012-10-04 | |||
| JP2018195845A | 2018-12-06 | |||
| JP2012523700A | 2012-10-04 | |||
| JP2018163928A | 2018-10-18 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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