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Title:
NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/142496
Kind Code:
A1
Abstract:
A nitride semiconductor epitaxial substrate which comprises a substrate, a buffer layer that is formed on the substrate, and a nitride semiconductor layer that is formed on the buffer layer, and which is configured such that the buffer layer comprises a nucleation layer that has a recessed and projected surface that faces the nitride semiconductor layer, and a uniform heating layer that is composed of a continuous film and is arranged on the substrate side.

Inventors:
NARITA YOSHINOBU (JP)
Application Number:
PCT/JP2018/043406
Publication Date:
July 25, 2019
Filing Date:
November 26, 2018
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Assignee:
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
H01L21/338; C23C16/02; C23C16/34; C30B25/18; C30B29/38; H01L21/205; H01L29/778; H01L29/812
Domestic Patent References:
WO2011016304A12011-02-10
Foreign References:
JP2016195241A2016-11-17
JP2011023677A2011-02-03
JP2013012767A2013-01-17
JP2016029741A2016-03-03
JP2016127223A2016-07-11
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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