Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/123092
Kind Code:
A1
Abstract:
Provided is a nitride semiconductor deep ultraviolet light-emitting element having exceptional light-emitting efficiency. A nitride semiconductor light-emitting element having a light-emission wavelength of 200-300 nm, wherein said element has an n-type layer comprising a single layer or a plurality of layers with differing bandgaps, a p-type layer comprising a single layer or a plurality of layers with differing bandgaps, and an active layer arranged between the n-type layer and the p-type layer. The p-type layer has a p-type first layer having a bandgap that is larger than the bandgap of the n-type first layer having the smallest bandgap within the n-type layer. An electron block layer is provided between the active layer and the p-type first layer, the electron block layer having a bandgap that is larger than the bandgaps of any of the layers forming the active layer and the p-type layer.
Inventors:
OBATA TOSHIYUKI (JP)
Application Number:
PCT/JP2014/052474
Publication Date:
August 14, 2014
Filing Date:
February 03, 2014
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
H01L33/32; H01S5/343
Foreign References:
| JP2007088270A | 2007-04-05 | |||
| JP2010205767A | 2010-09-16 | |||
| JP2013016711A | 2013-01-24 | |||
| JP2005093895A | 2005-04-07 | |||
| JP2012018963A | 2012-01-26 | |||
| JP2007088269A | 2007-04-05 | |||
| JP2010205767A | 2010-09-16 | |||
| JPH01298090A | 1989-12-01 |
Other References:
See also references of EP 2955763A4
J.APPL.PHYS., vol. 108, 2010, pages 033112
ELECTOM.LETT., vol. 44, 2008, pages 493
J.APPL.PHYS., vol. 108, 2010, pages 033112
ELECTOM.LETT., vol. 44, 2008, pages 493
Attorney, Agent or Firm:
YAMAMOTO, Noriaki et al. (JP)
Yamamoto 典輝 (JP)
Yamamoto 典輝 (JP)
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