Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/012017
Kind Code:
A1
Abstract:
To realize a nitride semiconductor light-emitting element having excellent lifespan characteristics in addition to improved light emission efficiency compared with conventional elements. A nitride semiconductor light-emitting element having a light-emitting layer obtained by alternately stacking a well layer comprising a nitride semiconductor and a barrier layer comprising a nitride semiconductor between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein a final barrier layer, which is the barrier layer formed at a position in contact with the p-type nitride semiconductor layer, contains n-type impurities, and the concentration of n-type impurities at the interface with the p-type nitride semiconductor layer is 4×1017/cm3 or less.
Inventors:
TSUKIHARA MASASHI (JP)
MIYOSHI KOHEI (JP)
MIYOSHI KOHEI (JP)
Application Number:
PCT/JP2014/065906
Publication Date:
January 29, 2015
Filing Date:
June 16, 2014
Export Citation:
Assignee:
USHIO ELECTRIC INC (JP)
International Classes:
H01L33/32; H01S5/343
Foreign References:
| JP2010093186A | 2010-04-22 | |||
| JP2013012683A | 2013-01-17 | |||
| JP2012069988A | 2012-04-05 | |||
| JP2011091251A | 2011-05-06 | |||
| JP2011023539A | 2011-02-03 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
Patent business corporation ユニアス international patent firm (JP)
Patent business corporation ユニアス international patent firm (JP)
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