Title:
NITRIDE SEMICONDUCTOR MATERIAL AND HEAT FLOW SWITCHING DEVICE COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2022/181521
Kind Code:
A1
Abstract:
Provided are a nitride semiconductor material with low lattice thermal conductivity and a heat flow switching device comprising the same. A nitride semiconductor material according to the present invention is a metal nitride represented by M-Si-N-Te (provided that M represents at least one transition metal element and Te is an arbitrary element) and has a thermal effusivity of less than 2,000 Ws0.5/m2K. Particularly, M is at least one element from Cr, Mn, Ni, Mo and W. A heat flow switching element according to the present invention comprises an N-type semiconductor layer 3, an insulating layer 4 stacked on the N-type semiconductor layer, and a P-type semiconductor layer 5 stacked on the insulating layer, wherein at least one of the N-type semiconductor layer and the P-semiconductor layer is formed from the nitride semiconductor material.
Inventors:
FUJITA TOSHIAKI (JP)
ADACHI MASAKI (JP)
ADACHI MASAKI (JP)
Application Number:
PCT/JP2022/006865
Publication Date:
September 01, 2022
Filing Date:
February 21, 2022
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C01B33/06; C23C14/06; C30B25/06; C30B29/38
Domestic Patent References:
| WO2016153073A1 | 2016-09-29 |
Foreign References:
| JP2019129188A | 2019-08-01 | |||
| JP2017174974A | 2017-09-28 |
Other References:
SINGH SAURABH, MATSUNAGA TAKUYA, HIRATA KEISUKE, MATSUNAMI MASAHARU, TAKEUCHI TSUNEHIRO: "A field effect heat flow switching device", THE JOURNAL OF THE THERMOELECTRICS SOCIETY OF JAPAN THE THERMOELECTRICS SOCIETY OF JAPAN, vol. 16, no. 2, 1 January 2019 (2019-01-01), pages 73 - 76, XP055961895, ISSN: 1349-4279, DOI: 10.50972/thermoelectrics.16.2_73
TAKUYA MATSUNAGA: "Preparation of heat Flow Switching Element Operating By Bias Voltage", 15TH ACADEMIC LECTURE OF THERMOELECTRICS SOCIETY OF JAPAN, 13 September 2018 (2018-09-13)
TAKUYA MATSUNAGA: "Preparation of heat Flow Switching Element Operating By Bias Voltage", 15TH ACADEMIC LECTURE OF THERMOELECTRICS SOCIETY OF JAPAN, 13 September 2018 (2018-09-13)
Attorney, Agent or Firm:
TAKAOKA Ryoichi (JP)
Download PDF: