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Title:
NITRIDE INSULATOR MATERIAL, METHOD FOR MANUFACTURING SAME, HEAT FLOW SWITCHING ELEMENT AND THERMOELECTRIC CONVERSION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/181520
Kind Code:
A1
Abstract:
Provided are a nitride insulator material having a low lattice thermal conductivity, a method for manufacturing the same, a heat flow switching element and a thermoelectric conversion element. The nitride insulator material according to the present invention is a nanocrystalline metal nitride represented by M-Si-N-Te (wherein: M represents Ta and/or Hf; and Te represents an arbitrary metal). The heat flow switching element according to the present invention is provided with an N-type semiconductor layer 3, an insulator layer 4 laminated on the N-type semiconductor layer, and a P-type semiconductor layer 5 laminated on the insulator layer, wherein the insulator layer is made of the aforesaid nitride insulator material.

Inventors:
ADACHI MASAKI (JP)
FUJITA TOSHIAKI (JP)
Application Number:
PCT/JP2022/006864
Publication Date:
September 01, 2022
Filing Date:
February 21, 2022
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C01B33/06; C30B29/38; H01B3/12; H01L35/30; H01L35/32
Foreign References:
JP2001071501A2001-03-21
JP2016187008A2016-10-27
JPH10335710A1998-12-18
Other References:
TAKUYA MATSUNAGA; KEISUKE HIRATA; MASAHARU MATSUNAMI; TSUNEHIRO TAKEUCHI: "Development of a new heat flow switching device", THE 38TH INTERNATIONAL CONFERENCE ON THERMOELECTRICS AND THE 4TH ASIAN CONFERENCE ON THERMOELECTRICS; JUNE 30TH TO JULY 4TH 2019, INTERNATIONAL THERMOELECTRICS SOCIETY, 1 January 2019 (2019-01-01) - 4 July 2019 (2019-07-04), XP009539410
TAKUYA MATSUNAGA: "Preparation of Heat flow switching Element Operating By Bias Voltage", ACADEMIC LECTURE OF THERMOELECTRICS SOCIETY OF JAPAN, 13 September 2018 (2018-09-13)
Attorney, Agent or Firm:
TAKAOKA Ryoichi (JP)
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