NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME

Title:

NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME

Document Type and Number:

WIPO Patent Application WO2005001899

Kind Code:

A3

Abstract:

Non-volatile field effect devices and circuits using same. A non-volatile field effect transistor utilizes a nanatube-based mechanical switch (30). The switch location can be at the source, drain or gate locations of the field effect transistor. Under one embodiment, the field effect device includes a source region and a drain region with a channel region (27) disposed therebetween. The source region is connected to a corresponding terminal (T2). A gate structure is disposed over the channel region and connected to a corresponding terminal (T1). A nanotube switching element (30) is responsive to a first control terminal (T3) and a second control terminal (T4) and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal.

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Inventors:

BERTIN CLAUDE L (US)
RUECKES THOMAS (US)
SEGAL BRENT M (US)
VOGELI BERNHARD (US)
BROCK DARREN K (US)
JAIPRAKASH VENKATACHALAM C (US)

Application Number:

PCT/US2004/018349

Publication Date:

June 09, 2005

Filing Date:

June 09, 2004

Export Citation:

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Assignee:

NANTERO INC (US)
BERTIN CLAUDE L (US)
RUECKES THOMAS (US)
SEGAL BRENT M (US)
VOGELI BERNHARD (US)
BROCK DARREN K (US)
JAIPRAKASH VENKATACHALAM C (US)

International Classes:

G11C7/06; G11C8/02; G11C11/00; G11C11/50; G11C13/02; G11C17/16; G11C23/00; H01H59/00; H01J1/62; H01L21/336; H01L21/82; H01L21/8246; H01L27/112; H01L27/115; H01L27/28; H01L29/06; H01L29/423; H01L29/739; H01L29/745; H01L29/76; H03K17/16; G11C16/02; G11C16/04; H01L51/00; H01L51/05; H01L51/30; H01L; (IPC1-7): G11C11/00; G11C11/50

Foreign References:

US4044343A	1977-08-23
US6548841B2	2003-04-15
US20020130353A1	2002-09-19

Other References:

RUECKES T. ET AL.: "Carbon nanotube-based nonvolatile random access memory for molecular computing", SCIENCE, vol. 289, July 2000 (2000-07-01), pages 94 - 97, XP002227401
KINARET J.M. ET AL.: "A carbon-nanotube-based nanorelay", APPLIED PHYSICS LETTERS, vol. 82, February 2003 (2003-02-01), pages 1287 - 1289, XP012034873

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